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One Ferroelectric Field-Effect Transistor and One Capacitor Ternary Content-Addressable Memory Based on Charge Domain Sensing Mechanism

https://doi.org/10.1109/ICICDT63592.2024.10717858

Duan, Jiahui; Zhao, Zijian; Ni, Kai (September 2024, IEEE)

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Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection

https://doi.org/10.1109/IRPS48204.2025.10983406

Ma, Sizhe; Chakraborty, Saikat; Qin, Yixin; Zhao, Zijian; Duan, Jiahui; Jung, Moonyoung; Kim, Kijoon; Lim, Suhwan; Seo, Kwangyou; Kim, Kwangsoo; et al (March 2025, IEEE)

Free, publicly-accessible full text available March 30, 2026
A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping

https://doi.org/10.1109/LED.2024.3477510

Zhao, Zijian; Qin, Yixin; Duan, Jiahui; Lee, YuShan; Lim, Suhwan; Kim, Kijoon; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Narayanan, Vijaykrishnan; et al (December 2024, IEEE Electron Device Letters)

Free, publicly-accessible full text available December 1, 2025
Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET

https://doi.org/10.1109/IEDM50854.2024.10873305

Duan, Jiahui; Xu, Yixin; Zhao, Zijian; Lu, Anni; Read, James; Imani, Mohsen; Kampfe, Thomas; Niemier, Mike; Gong, Xiao; Yu, Shimeng; et al (December 2024, IEEE)

Free, publicly-accessible full text available December 7, 2025

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